FF200R17KE3HOSA1


FF200R17KE3HOSA1

Part NumberFF200R17KE3HOSA1

Manufacturer

Description

Datasheet

Package / CaseModule

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

FF200R17KE3HOSA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Modules
Datasheet
Standard Package10
ManufacturerInfineon Technologies
SeriesC
Part StatusActive
IGBT TypeTrench Field Stop
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)310A
Power - Max1250W
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 200A
Current - Collector Cutoff (Max)3mA
Input Capacitance (Cies) @ Vce18nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

FF200R17KE3HOSA1 - Related Products

More >>
FF200R06KE3HOSA1 Infineon Technologies, IGBT Module Trench Field Stop Half Bridge 600V 260A 680W Chassis Mount Module, View
FF200R12KT4HOSA1 Infineon Technologies, IGBT Module Trench Field Stop Half Bridge 1200V 320A 1100W Chassis Mount Module, View
FF200R17KE3HOSA1 Infineon Technologies, IGBT Module Trench Field Stop Half Bridge 1700V 310A 1250W Chassis Mount Module, View
FF200R12KE4HOSA1 Infineon Technologies, IGBT Module Trench Field Stop Half Bridge 1200V 240A 1100W Chassis Mount Module, View

FF200R17KE3HOSA1 - Tags

FF200R17KE3HOSA1 FF200R17KE3HOSA1 PDF FF200R17KE3HOSA1 datasheet FF200R17KE3HOSA1 specification FF200R17KE3HOSA1 image FF200R17KE3HOSA1 India Renesas Electronics India FF200R17KE3HOSA1 buy FF200R17KE3HOSA1 FF200R17KE3HOSA1 price FF200R17KE3HOSA1 distributor FF200R17KE3HOSA1 supplier FF200R17KE3HOSA1 wholesales